SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 40, Issue 2, 2011, Pages 165-175

Influence of dopant on growth of intermetallic layers in Sn-Ag-Cu solder joints

(4) Li, G Y a Bi, X D b Chen, Q a Shi, X Q c

a SOUTH CHINA UNIVERSITY OF TECHNOLOGY (China)

b Guangdong Yuejing High Tech Co Ltd (China)

c HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE (Hong Kong)

Author keywords

activation energy; intermetallic compounds; Lead free solder; Sb addition

Indexed keywords

AGING TIME; ATOMIC DIFFUSIONS; CU SUBSTRATE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GROWTH OF INTERMETALLICS; IMC LAYER; INTERDIFFUSION COEFFICIENTS; INTERFACE REACTIONS; INTERFACIAL INTERACTION; INTERMETALLIC COMPOUNDS; ISOTHERMAL AGING; LEAD-FREE SOLDER; POWER-LAW RELATIONSHIP; SB ADDITION; SEM; SN-3.5AG; SNAGCU SOLDER; SOLDER ALLOYS; SOLDER JOINTS; X-RAY DIFFRACTOMETRY;

ACTIVATION ENERGY; ANTIMONY; ANTIMONY COMPOUNDS; ELECTROCHEMICAL ELECTRODES; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN BOUNDARIES; GRAIN GROWTH; INTERMETALLICS; LEAD COMPOUNDS; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SILVER; SILVER ALLOYS; SOLDERING ALLOYS; SUBSTRATES; TIN ALLOYS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

TIN;

EID: 79951511419 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-010-1441-8 Document Type: Article

Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.