Electronic properties of adsorbates on in0.37Ga 0.63As(001)-(2×4)

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 441-449

  Winn, D L ^a   Grassman, T J ^a   Kummel, A C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LOGIC GATES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

ALLOY STRUCTURES; BONDING GEOMETRY; FERMI LEVEL PINNING; GAAS(001); IN-BAND; STATE DENSITIES;

DENSITY FUNCTIONAL THEORY;

EID: 45249122725     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779580     Document Type: Conference Paper

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