Quantitative profiling of SiGe/Si superlattices by time-of-flight secondary ion mass spectrometry: The advantages of the extended full spectrum protocol

Rapid Communications in Mass Spectrometry

Volumn 25, Issue 5, 2011, Pages 629-638

  Py, M ^a   Barnes, J P ^a   Lafond, D ^a   Hartmann, J M ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILING; GERMANIUM; IMPURITIES; ION BEAMS; IONS; SECONDARY EMISSION; SI-GE ALLOYS;

COMPOSITIONAL CHARACTERIZATION; FULL-SPECTRUM; IONIZATION YIELD; MATRICES EFFECT; NON-LINEAR VARIATION; QUANTITATIVE PROFILING; SECONDARY ION-MASS SPECTROMETRY; SIGE LAYERS; SIGE/SI; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY;

SECONDARY ION MASS SPECTROMETRY;

EID: 79751483128     PISSN: 09514198     EISSN: 10970231     Source Type: Journal    
DOI: 10.1002/rcm.4904     Document Type: Article

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