Secondary cluster ions Ge2- and Ge3-for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

Semiconductors

Volumn 44, Issue 3, 2010, Pages 401-404

  Drozdov, M N ^a   Drozdov, Yu N ^a   Lobanov, D N ^a   Novikov, A V ^a   Yurasov, D V ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

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Indexed keywords

EID: 77950478394     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106378261003022X     Document Type: Article

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