Selective epitaxial growth of InP in STI trenches on off-axis Si (001) substrates

ECS Transactions

Volumn 27, Issue 1, 2010, Pages 959-964

  Wang, G ^a,b   Nguyen, N D ^a   Leys, M R ^a   Loo, R ^a   Brammertz, G ^a   Richard, O ^a   Bender, H ^a   Dekoster, J ^a   Meuris, M ^a   Heyns, M M ^a,b   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; BAKERIES; BUDGET CONTROL; BUFFER LAYERS; CRYSTALLIZATION; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; NUCLEATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

CRYSTALLINE QUALITY; HIGH QUALITY; NUCLEATION LAYERS; SELECTIVE EPITAXIAL GROWTH; SHALLOW TRENCH ISOLATION; SI (001) SUBSTRATE; THERMAL BUDGET; THREADING DISLOCATION;

SILICON;

EID: 84863115955     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3360736     Document Type: Conference Paper

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