MOCVD selective growth of InP through narrow openings and its application to InP HBT extrinsic base regrowth

Journal of Crystal Growth

Volumn 260, Issue 3-4, 2004, Pages 316-321

  Dong, Yingda ^a   Okuno, Yae L ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. Semiconducting III V materials; B3. Bipolar transistor

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); EPITAXIAL GROWTH; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; OSCILLATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA; SURFACE PHENOMENA;

COLLECTOR ELECTRODES; LATERAL OVERGROWTH; MICROWAVE CHARACTERISTICS; SURFACE DAMAGES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0344740778     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.050     Document Type: Article

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