A modified BCF model to quantitatively describe the (1 0 0)InP growth rate in chemical beam epitaxy

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 11-16

  Verschuren, C A ^a   Leys, M R ^a   Marschner, T ^a   Vonk, H ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

CBE; Growth rate; Nucleation; Step flow

Indexed keywords

CHEMICAL BEAM EPITAXY; CRYSTAL ORIENTATION; GIBBS FREE ENERGY; MATHEMATICAL MODELS; NUCLEATION; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ADATOMS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032099238     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00045-1     Document Type: Article

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