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Volumn 311, Issue 7, 2009, Pages 1939-1943
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Terahertz quantum cascade lasers based on In0.53 Ga0.47 As / In0.52 Al0.48 As / InP
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Author keywords
A1. Superlattices; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Infrared devices; B3. Laser diodes
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Indexed keywords
ALUMINUM;
CRYSTAL GROWTH;
INFRARED DEVICES;
JET PUMPS;
LIQUID LASERS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
QUANTUM CASCADE LASERS;
RESONANT TUNNELING;
SEMICONDUCTOR QUANTUM WELLS;
SEMICONDUCTOR QUANTUM WIRES;
A1. SUPERLATTICES;
A3. MOLECULAR BEAM EPITAXY;
B2. SEMICONDUCTING III-V MATERIALS;
B3. INFRARED DEVICES;
B3. LASER DIODES;
CONTINUOUS WAVE LASERS;
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EID: 63349091174
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.090 Document Type: Article |
Times cited : (29)
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References (11)
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