Variation of surface morphology with substrate temperature for molecular beam epitaxially grown GaSb(100) on GaAs(100)

Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1468-1470

  Brown, S J ^a   Grimshaw, M P ^a   Ritchie, D A ^a   Jones, G A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003530951     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116910     Document Type: Article

References (13)

1. C. R. Bolognesi, E. J. Caine, and H. Kroemer, IEEE Electron Device Lett. 16, 15 (1994).
2. Y. Zhang, N. Baruch, and W. I. Wang, Appl. Phys. Lett. 63, 1068 (1993).
3. G. R. Johnson, B. C. Cavenett, T. M. Kerr, P. B. Kirby, and C. E. C. Wood, Semicond. Sci. Technol. 3, 1157 (1988).
4. R. N. Kyutt, R. Scholz, S. S. Ruminov, T. S. Argunova, A. A. Budza, S. V. Ivanov, P. S. Kop'ev, L. M. Sorokin, and M. P. Shcheglov, Phys. Solid State 35, 372 (1993).
5. B. Brar and D. Leonard. Appl. Phys. Lett. 64, 463 (1995).
6. G. E. Franklin, D. H. Rich, A. Samsavar, E. S. Hirschorn, F. M. Leibsle, T. Miller, and T. C. Chiang, Phys. Rev. B 41, 12619 (1990).
7. K. Shiraishi, Appl. Phys. Lett. 60, 1363 (1992).
8. V. Bressler-Hill, M. Wassermeier, K. Pond, R. Maboudian, G. A. D. Briggs, P. M. Petroff, and W. H. Weinberg, J. Vac. Sci. Technol. B 10, 1881 (1992); E. J. Heller and M. G. Lagally, Appl. Phys. Lett. 60, 2675 (1992).
9. V. Bressler-Hill, M. Wassermeier, K. Pond, R. Maboudian, G. A. D. Briggs, P. M. Petroff, and W. H. Weinberg, J. Vac. Sci. Technol. B 10, 1881 (1992); E. J. Heller and M. G. Lagally, Appl. Phys. Lett. 60, 2675 (1992).
10. V. Bressler-Hill, R. Maboudian, M. Wassermeier, X.-S. Wang, K. Pond, P. M. Petroff, and W. H. Weinberg, Surf. Sci. 287/288, 514 (1993).
11. N. Cabrera and M. M. Levine, Philos. Mag. 1, 450 (1956).
12. W. K. Burton, N. Cabrera, and F. C. Frank, Philos. Trans. R. Soc. 243, 299 (1950).
13. B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett. 55, 1345 (1989).