Analysis of strain in the {112̄0} prismatic fault in GaN using digital processing of high-resolution transmission electron microscopy images

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10249-10256

  Kret, S ^a   Ruterana, P ^a   Nouet, G ^a  

^a LABORATOIRE CRISMAT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; NITRIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

DRUM MODEL; GEOMETRIC PHASE METHODS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034513498     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/325     Document Type: Article

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