Enhanced electrical characteristics of AlGaN/GaN heterostructure field-effect transistor with p-GaN back barriers and Si delta-doped layer

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2824-2827

  Lee, Hwa Chul ^a   Hyun, Sun Young ^a   Cho, Hyun Ick ^a   Ostermaier, Clemens ^a   Kim, Ki Won ^a   Ahn, Sang Il ^a   Na, Kyoung Il ^a   Ha, Jong Bong ^a   Kwon, Dae Hyuk ^b   Hahn, Cheol Koo ^c   Hahm, Sung Ho ^a   Choi, Hyun Chul ^a   Lee, Jung Hee ^a  

^a Kyungpook National University   (South Korea)

^b Kyungil University   (South Korea)

^c Korea Electronic Technology Institute (KETI)   (South Korea)

Author keywords

Buffer leakage; Carrier confinement; Heterostructure field effect transistor (HFET); p GaN back barrier; Si delta doped layer

Indexed keywords

CIVIL AVIATION; DRAIN CURRENT; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM; SILICON; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

BUFFER LEAKAGE; CARRIER CONFINEMENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); P-GAN BACK BARRIER; SI DELTA-DOPED LAYER;

GALLIUM NITRIDE;

EID: 54249126530     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2824     Document Type: Article

References (9)

1. Y. F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. DenBaars, and U. K. Mishra: IEEE Electron Device Lett. 19 (1998) 50.
2. C. H. Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E. L. Hu, S. P. DenBaars, and U. K. Mishra: Appl. Phys. Lett. 73 (1998) 3147.
3. T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra: IEEE Electron Device Lett. 27 (2006) 13.
4. S. J. Chang, S. C. Wei, Y. K. Su, C. H. Liu, S. C. Chen, U. H. Liaw, T. Y. Tsai, and T. H. Hsu: Jpn. J. Appl. Phys. 42 (2003) 3316.
5. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Chemg, and S. C. Chen: Mater. Sci. Eng. B 110 (2004) 172.
6. K. H. Kim, C. M. Jeon, S. H. Oh, C. G. Park, J. H. Lee, K. S. Lee, and J. L. Lee: Phys. Status Solidi C 0 (2003) 223.
7. O. Katz, A. Horn, G. Bahir, and J. Salzraan: IEEE Trans. Electron Devices 50 (2003) 2002.
8. N. Maeda, K. Tsubaki, T. Saitoh, T. Tawara, and N. Kobayashi: Opt. Mater. 23 (2003) 211.
9. M. Kuraguchi, Y. Takada, W. Saito, I. Omura, and K. Tsuda: Phys. Status Solidi C 2 (2005) 2647.