250 °C operation normally-off GaN MOSFETs

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 784-787

  Niiyama, Yuki ^a   Kambayashi, Hiroshi ^a   Ootomo, Shinya ^a   Nomura, Takehiko ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Enhancement mode; GaN; High temperature operation; Normally off; Power devices

Indexed keywords

DRAIN CURRENT; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; SILICON; THRESHOLD VOLTAGE;

ACTIVATION ANNEALING; CONTACT LAYERS; ENHANCEMENT MODE; POWER DEVICES;

MOSFET DEVICES;

EID: 34248577018     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.034     Document Type: Article

References (10)

1. http://www.mitsubishielectric.co.jp/news/2006/0124.htm.
2. Yoshida S, Li J, Wada T, Takehara H. High power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit. In: 15th international symposium on power semiconductor devices and ICs (ISPSD); 2003, S3.3, p. 58-61.
3. Irokawa Y., Nakano Y., Ishiko M., Kachi T., Kim J., Ren F., et al. MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors. Appl Phys Lett 84 (2004) 2919-2921
4. Motocha K., Chow T.P., and Gutmann R.J. High-voltage normally off GaN MOSFETs on sapphire substrates. IEEE Trans Electron Dev 52 (2005) 6-10
5. - GaN/sapphire substrates. In: 18th international symposium on power semiconductor devices and ICs (ISPSD); 2006 (Italy), p. 10-1.
6. Lee H.B., Cho H.I., An H.S., Bae Y.H., Lee M.B., Lee J.H., et al. A normally off GaN n-MOSFET With Schottky-Barrier source and drain on a Si-auto-doped p-GaN/Si. IEEE Trans Electron Dev 27 (2006) 81-83
7. Jang S., Ren F., Pearton S.J., Gila B.P., Hlad M., Abernathy C.R., et al. Si-diffused GaN for enhancement-mode GaN MOSFET on Si applications. J Electron Mater 35 (2006) 685-690
8. 2/GaN interface characteristics for an enhnaced field effect transistor. Phys Stat Solid (a), to be published.
9. Irokawa Y., Ishiguro O., Kachi T., Pearton S.J., and Ren F. Implantation temperature dependence of Si activation in AlGaN. Appl Phys Lett 88 (2006) 182106
10. Nakano Y., and Jimbo T. Co-implantation of Si + N into GaN for n-type doping. J Appl Phys 92 (2002) 3815-3819