Process-induced damage characterization of patterned low-κ film using electron energy loss spectroscopy technique

Japanese Journal of Applied Physics

Volumn 49, Issue 11, 2010, Pages

  Otsuka, Yuji ^a   Shimizu, Yumiko ^a   Kawasaki, Naohiko ^a   Ogawa, Shinichi ^b   Tanaka, Isao ^c  

^a TORAY RESEARCH CENTER INC   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CU INTERCONNECT; CU LINES; CU-INTERCONNECTS; ELEMENTAL MAPPING; INDUCED DAMAGE; LOW DIELECTRIC CONSTANTS; NANOMETER-SCALE RESOLUTION; POROUS SI; SIDE WALLS; THICKNESS DISTRIBUTIONS; VALENCE EELS;

COPPER; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; NUCLEAR INSTRUMENTATION; POROUS SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79551627839     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.111501     Document Type: Article

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