Measuring the diffusion of Ti and Cu in low-k materials for microelectronic devices by EELS, EFTEM and EDX

Journal of Physics: Conference Series

Volumn 26, Issue 1, 2006, Pages 77-80

  Barnes, J P ^a   Lafond, D ^a   Guedj, C ^a   Fayolle, M ^a   Meininger, P ^a   Maitrejean, S ^a   David, T ^a   Posseme N ^b   Bayle Guillemaud, P ^c   Chabli, Amal ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644525271     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/26/1/018     Document Type: Conference Paper

References (5)

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association 2004 http://www.itrs.net/Common/2004Update/2004Update.htm
2. Donohue H, Buchanan K, Dunin-Borkowski R E and Newcomb S B 2003 The effects of resist strip processing on a porous low k dielectric oxide Inst. Phys. Conf. Ser. vol 180 p 413-416
3. Sri Satyanarayana, Ricky McGowan, Brian White and Sharath D Hosali, Sematech Damage Mechanisms in Porous Low-k Integration Semiconductor Int. 6/1/2005
4. Possémé N, David T, Chevolleau T, Vallier L, Meininger P, Louveau O, Fayolle M and Joubert O 2004 New Ash Challenges for Porous Low-k integration: Trade-Off between Sidewall Film Modification and Increase in k Value Dry Process Symp., Tokyo, Japan, Nov, 30-Dec, 1
5. David T, Possémé N, Chevolleau T, Darnon M, Louveau O, Louis D, Passemard G and Joubert O 2005 A Study of Plasma Treatments Limiting Metal Barrier Diffusion into Porous Low-k Materials Advanced Metallization Conf., 2005, Tokyo, Japan, Oct 12-14 submitted