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Volumn 404, Issue 23-24, 2009, Pages 5218-5220
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Structural characterization and electro-physical properties for SiOC(-H) low-k dielectric films
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Author keywords
(Si CH3)+ (Si O) defects; Metal insulator semiconductor (MIS) structures; SiOC ( H) low k film; Surface state conditions
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Indexed keywords
DEPOSITED FILMS;
ELECTRICAL PROPERTY;
INTERSTITIAL DEFECTS;
LOW DIELECTRIC CONSTANTS;
LOW-K DIELECTRIC FILMS;
LOW-K FILMS;
METAL INSULATOR SEMICONDUCTOR STRUCTURES;
OPTICAL EMISSION SPECTRA;
POSITIVE CHARGES;
SI-H BONDS;
SIOC (-H) LOW-K FILM;
SIOC(-H) FILMS;
STRUCTURAL CHARACTERISTICS;
STRUCTURAL CHARACTERIZATION;
STRUCTURAL ORDERS;
DIELECTRIC FILMS;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC PROPERTIES;
EMISSION SPECTROSCOPY;
METAL INSULATOR BOUNDARIES;
MIS DEVICES;
OPTICAL PROPERTIES;
OXYGEN;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SILICON;
SURFACE DEFECTS;
SWITCHING CIRCUITS;
STRUCTURAL PROPERTIES;
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EID: 74349098052
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2009.08.260 Document Type: Article |
Times cited : (5)
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References (15)
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