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Volumn 404, Issue 23-24, 2009, Pages 5218-5220

Structural characterization and electro-physical properties for SiOC(-H) low-k dielectric films

Author keywords

(Si CH3)+ (Si O) defects; Metal insulator semiconductor (MIS) structures; SiOC ( H) low k film; Surface state conditions

Indexed keywords

DEPOSITED FILMS; ELECTRICAL PROPERTY; INTERSTITIAL DEFECTS; LOW DIELECTRIC CONSTANTS; LOW-K DIELECTRIC FILMS; LOW-K FILMS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; OPTICAL EMISSION SPECTRA; POSITIVE CHARGES; SI-H BONDS; SIOC (-H) LOW-K FILM; SIOC(-H) FILMS; STRUCTURAL CHARACTERISTICS; STRUCTURAL CHARACTERIZATION; STRUCTURAL ORDERS;

EID: 74349098052     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.260     Document Type: Article
Times cited : (5)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.