Vibrational spectroscopy characterization of low-dielectric constant SiOC:H films prepared by PECVD technique

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 295-300

  Das, G ^a   Mariotto, G ^a   Quaranta, A ^a  

^a UNIVERSITY OF TRENTO   (Italy)

Author keywords

Carbon doped silicon oxide; Low dielectric constant films; Vibrational spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); FILMS; RAMAN SCATTERING; THERMAL EFFECTS; THERMODYNAMIC STABILITY; VIBRATION MEASUREMENT;

CARBON-DOPED SILICON OXIDE; LOW-DIELECTRIC CONSTANT FILMS; STRUCTURAL STABILITY; VIBRATIONAL SPECTROSCOPY;

PERMITTIVITY;

EID: 9544219709     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.121     Document Type: Conference Paper

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