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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 1, 2011, Pages 0110161-0110165

High verticality InP/InGaAsP etching in Cl2/H2/Ar inductively coupled plasma for photonic integrated circuits

(5) Parker, John S a Norberg, Erik J a Guzzon, Robert S a Nicholes, Steven C a Coldren, Larry A a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED CIRCUITS; ELECTROMAGNETIC INDUCTION; HYDROGEN; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING;

CHAMBER PRESSURE; ETCH DAMAGE; ETCH DEPTH; ETCH RATES; GAS FLOWS; HYDROGEN GAS; INP/INGAASP; ISOTROPIC ETCHING; MASKING LAYERS; PHOTONIC INTEGRATED CIRCUITS; PLASMA IGNITION; SLOPE ANGLES;

ARGON;

EID: 79551625066 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3522659 Document Type: Conference Paper

Times cited : (32)

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