ICP etching process development based on Cl2/H2 chemistry and adapted to non-thermalized InP wafers for the realisation of high aspect ratio and vertical sidfewall deep ridge waveguides and buried heterostructures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 262-265

  Guilet, S ^a   Bouchoule, S ^a   Jany, C ^b   Corr, C S ^c   Chabert, P ^c  

^a CNRS   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES; WSI CIRCUITS;

SIDFEWALL DEEP RIDGE WAVEGUIDES; THERMAL GREASE;

CHLORINE COMPOUNDS;

EID: 33847131835     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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