Ultrahigh-density Β-Ga2O3/N-doped Β-Ga 2O3 Schottky and p-n nanowire junctions: Synthesis and electrical transport properties

Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

  Chang, Li Wei ^a   Li, Ching Fei ^c   Hsieh, Yun Tsung ^a   Liu, Chia Ming ^b   Cheng, Yi Ting ^b   Yeh, Jien Wei ^a   Shih, Han C ^a,d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^d CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTRA; CURRENT TRANSPORT; CURRENT VOLTAGE; DEEP LEVEL; ELECTRICAL CHARACTERISTIC; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON TRANSPORT; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS; N-DOPED; NANOWIRE JUNCTIONS; NEAR-SURFACE; PLASMA TREATMENT; POTENTIAL BARRIERS; SCHOTTKY; SPACE-CHARGE LIMITED; TEMPERATURE RANGE; THERMAL CHEMICAL VAPOR DEPOSITION; TUNNELING MECHANISM; ULTRAHIGH DENSITY;

DIAMOND FILMS; DISTILLATION; ELECTRIC PROPERTIES; NANOWIRES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TRANSPORT PROPERTIES;

ELECTRIC WIRE;

EID: 79551587526     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3530787     Document Type: Article

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