Single-electron tunneling effects in a metallic double dot device

Applied Physics Letters

Volumn 80, Issue 4, 2002, Pages 667-669

  Junno, T ^a   Carlsson, S B ^a   Xu, H Q ^a   Samuelson, L ^a   Orlov, A O ^b   Snider, G L ^b  

^a LUND UNIVERSITY   (Sweden)

^b University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB STAIRCASE; DIFFERENTIAL CONDUCTANCE MEASUREMENTS; DRAIN SOURCES; GATE VOLTAGES; NANODISKS; SINGLE ELECTRON TUNNELING;

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; ELECTRON TUNNELING;

TUNNEL JUNCTIONS;

EID: 79955994438     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436532     Document Type: Article

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