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Volumn 34, Issue 11, 2000, Pages 1295-1300

Photoelectric properties of isotype and anisotype Si/GaN:O heterojunctions

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EID: 0034310871     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1325426     Document Type: Article
Times cited : (4)

References (13)
  • 2
    • 0034146980 scopus 로고    scopus 로고
    • S.E. Aleksandrov, T.A. Gavrikova, and V.A. Zykov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 297 (2000) Semiconductors 34, 291 (2000)].
    • (2000) Semiconductors , vol.34 , pp. 291
  • 5
    • 0001696713 scopus 로고
    • L. G. Bakueva, V. I. Il'in, S. F. Musikhin, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 16, 1416 (1982) [Sov. Phys. Semicond. 16, 907 (1982)].
    • (1982) Sov. Phys. Semicond. , vol.16 , pp. 907
  • 7
    • 0001963969 scopus 로고
    • M. G. Ermakov, V. I. Polyakov, P. I. Perov, and M. I. Elinson, Fiz. Tekh. Poluprovodn. (Leningrad) 18, 115 (1984) [Sov. Phys. Semicond. 18, 69 (1984)].
    • (1984) Sov. Phys. Semicond. , vol.18 , pp. 69
  • 12
    • 0001707706 scopus 로고
    • A. Ya. Shik, Fiz. Tekh. Poluprovodn. (Leningrad) 16, 1411 (1982) [Sov. Phys. Semicond. 16, 904 (1982)].
    • (1982) Sov. Phys. Semicond. , vol.16 , pp. 904


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.