Negative differential resistance in GaN nanocrystals above room temperature

Nanotechnology

Volumn 20, Issue 40, 2009, Pages

  Chitara, Basant ^a,b   Ivan Jebakumar, D S ^a   Rao, C N R ^a,b   Krupanidhi, S B ^a,b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ROUTES; METAL SEMICONDUCTOR METAL; NEGATIVE DIFFERENTIAL RESISTANCES; ROOM TEMPERATURE;

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOCRYSTALS; NEGATIVE RESISTANCE; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

GALLIUM; GALLIUM NITRIDE; METAL; NANOCRYSTAL; SILICON DIOXIDE; UNCLASSIFIED DRUG; GALLIUM NITRATE; NANOPARTICLE;

ARTICLE; CHEMICAL REACTION KINETICS; ELECTRIC CURRENT; ELECTRIC POTENTIAL; NANOANALYSIS; NEGATIVE DIFFERENTIAL RESISTANCE; PRIORITY JOURNAL; REPRODUCIBILITY; ROOM TEMPERATURE; SEMICONDUCTOR; CHEMISTRY; NANOTECHNOLOGY; TEMPERATURE;

GALLIUM; NANOPARTICLES; NANOTECHNOLOGY; TEMPERATURE;

EID: 70349660127     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/40/405205     Document Type: Article

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