Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1-xN/GaN heterostructures

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1185-1190

  Asgari, A ^a   Kalafi, M ^a   Faraone, L ^b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON MOBILITY; FERMI LEVEL; POISSON EQUATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

SCHRODINGER EQUATION; SHEET CARRIER DENSITY; TWO DIMENSIONAL ELECTRON MOBILITY;

HETEROJUNCTIONS;

EID: 1142280301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635654     Document Type: Article

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