Effect of ion bombardment and hydrogen pressure during deposition on the optical properties of hydrogenated amorphous carbon thin films

Diamond and Related Materials

Volumn 20, Issue 2, 2011, Pages 109-114

  Kassavetis, S ^a   Laskarakis, A ^a   Logothetidis, S ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Hydrogenated amorphous carbon; Optical properties; Spectroscopic ellipsometry

Indexed keywords

A-C:H FILMS; C-SI SUBSTRATES; CARBON BOND; CARBON-BASED; DISPERSION MODELS; ELECTRONIC TRANSITION; ENERGY POSITION; HYDROGEN PARTIAL PRESSURES; HYDROGEN PRESSURES; HYDROGENATED AMORPHOUS CARBON; HYDROGENATED AMORPHOUS CARBON (A-C:H); INTERBAND; LORENTZ OSCILLATOR; NEGATIVE VOLTAGE; OPTICAL TRANSPARENCY; ORGANIC ELECTRONICS; PHASE MODULATED SPECTROSCOPIC ELLIPSOMETRY; PROTECTIVE MATERIALS; RF-MAGNETRON SPUTTERING; SPECTRAL REGION;

AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON FILMS; DEPOSITION; FILM GROWTH; HYDROGEN; HYDROGENATION; ION BOMBARDMENT; IONS; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; ORGANIC POLYMERS; PRESSURE EFFECTS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; VAPOR DEPOSITION;

AMORPHOUS CARBON;

EID: 79551556086     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.11.008     Document Type: Article

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