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Volumn 103-104, Issue , 1998, Pages 380-383

Ion bombardment effect on the properties of hydrogenated amorphous carbon films

Author keywords

Hydrogenated amorphous carbon films; Ion bombardment; Lon beam assisted deposition

Indexed keywords

BAND STRUCTURE; CARBON; DEPOSITION; ELECTRON ENERGY LEVELS; ELLIPSOMETRY; HYDROGENATION; INFRARED SPECTROSCOPY; ION BEAMS; ION BOMBARDMENT; MOLECULAR STRUCTURE; OPTICAL PROPERTIES; ULTRAVIOLET SPECTROSCOPY;

EID: 18544406160     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(98)00416-2     Document Type: Article
Times cited : (3)

References (9)
  • 9
    • 0037543151 scopus 로고
    • M.H. Brodsky (Ed.), Plenum, New York
    • J. Tauc, in: M.H. Brodsky (Ed.), Amorphous Semiconductors, Plenum, New York, 1973.
    • (1973) Amorphous Semiconductors
    • Tauc, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.