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Applied Surface Science

Volumn 257, Issue 7, 2011, Pages 2950-2954

Spectroscopic characterization of β-FeSi 2 single crystals and homoepitaxial β-FeSi 2 films by XPS and XAS

(8) Esaka, F a Yamamoto, H a Udono, H b Matsubayashi, N c Yamaguchi, K a Shamoto, S a Magara, M a Kimura, T a

a JAPAN ATOMIC ENERGY AGENCY (Japan)

b IBARAKI UNIVERSITY (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Depth profiling; Fe L edge; Iron silicide; Si K edge; XAS; XPS

Indexed keywords

DEPTH PROFILING; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; SILICIDES; SILICON; SINGLE CRYSTALS; SYNCHROTRON RADIATION; SYNCHROTRONS; X RAY ABSORPTION SPECTROSCOPY;

CHEMICAL STATE; CHEMICAL STATE ANALYSIS; GROWTH CONDITIONS; HOMOEPITAXIAL FILMS; IRON SILICIDES; NATIVE OXIDE LAYER; SPECTROSCOPIC CHARACTERIZATION; SUBSTRATE TEMPERATURE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79251600853 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2010.10.097 Document Type: Article

Times cited : (9)

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