Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition

Thin Solid Films

Volumn 461, Issue 1, 2004, Pages 13-16

  Yamaguchi, K ^a   Haraguchi, M ^b   Katsumata, T ^b   Shimura, K ^a   Yamamoto, H ^a   Hojou, K ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b IBARAKI UNIVERSITY   (Japan)

Author keywords

FeSi2; Crystal structure; Ion beam sputter deposition

Indexed keywords

CRYSTAL STRUCTURE; DIFFUSION; ION BEAM ASSISTED DEPOSITION; IRON; IRON COMPOUNDS; SILICON; VACUUM; X RAY DIFFRACTION ANALYSIS;

Β-FESI2; FILM THICKNESS; ION BEAM SPUTTER DEPOSITION;

THIN FILMS;

EID: 2942670487     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.02.051     Document Type: Conference Paper

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