X-ray photoelectron and X-ray absorption spectroscopic study on β-FeSi 2 thin films fabricated by ion beam sputter deposition

Applied Surface Science

Volumn 256, Issue 10, 2010, Pages 3155-3159

  Esaka, F ^a   Yamamoto, H ^a   Matsubayashi, N ^b   Yamada, Y ^c   Sasase, M ^d   Yamaguchi, K ^a   Shamoto, S ^a   Magara, M ^a   Kimura, T ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

Iron silicide; Surface; XAS; XPS

Indexed keywords

FABRICATION; ION BEAMS; LIGHT ABSORPTION; PHOTOELECTRONS; PHOTONS; SILICA; SILICIDES; SILICON; SPECTROSCOPIC ANALYSIS; SPUTTERING; SURFACE STATES; SURFACES; SYNCHROTRON RADIATION; SYNCHROTRONS; THIN FILMS; X RAY ABSORPTION SPECTROSCOPY;

ION BEAM SPUTTER DEPOSITION; ION BEAM SPUTTERING DEPOSITION; IRON SILICIDES; PREFERENTIAL OXIDATION; SPECTROSCOPIC STUDIES; SUBSTRATE TEMPERATURE; SURFACE CHEMICAL STATE; X-RAY PHOTOELECTRONS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77349108570     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.11.090     Document Type: Article

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