Formation of 'environmentally friendly' semiconductor (β-FeSi2) thin films prepared by ion beam sputter deposition (IBSD) method

Thin Solid Films

Volumn 401, Issue 1-2, 2001, Pages 73-76

  Sasase, M ^b   Nakanoya, T ^a   Yamamoto, H ^a   Hojou, K ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

FeSi2; FeSi2; Highly oriented; Ion beam sputter deposition; Phase transformation temperature; Thin films

Indexed keywords

ION BEAM ASSISTED DEPOSITION; IRON COMPOUNDS; PHASE TRANSITIONS; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; THERMAL EFFECTS;

ION BEAM SPUTTER DEPOSITION (IBSD);

THIN FILMS;

EID: 0035904916     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01485-7     Document Type: Article

References (21)