Single-electron charging and discharging analyses in Ge-nanocrystal memories

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 376-383

  De Sousa, Jeanlex Soares ^a   Peibst, Robby ^b,c   Erenburg, Milena ^b,d   Bugiel, Eberhard ^b   Farias, G A ^a   Leburton, Jean Pierre ^e   Hofmann, Karl R ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^d TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^e UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Semiconductor device modeling; single electron devices

Indexed keywords

BAND GAPS; CHARGING STATE; CHARGING/DISCHARGING; MECHANICAL MODEL; NANOCRYSTAL MEMORIES; NUMBER OF ELECTRONS; PUMP-AND-PROBE; QUANTUM KINETIC; SEMICONDUCTOR DEVICE MODELING; SINGLE-ELECTRON CHARGING; SINGLE-ELECTRON DEVICES; SPATIAL DISTRIBUTION; SURFACE TRAP; TRANSIENT CHARGING; TRANSITION RATES; TRAP STATE; TUNNELING OXIDES;

COMPUTER SIMULATION; DENSITY FUNCTIONAL THEORY; DISTRIBUTION FUNCTIONS; ELECTRON DEVICES; ELECTRONS; GERMANIUM; NANOCRYSTALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE; SEMICONDUCTOR SWITCHES; SURFACE DEFECTS; WAVE FUNCTIONS;

SEMICONDUCTOR DEVICE MODELS;

EID: 79251489766     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2091959     Document Type: Article

References (19)

1. S. Tiwari, F. Rana, H. Hanafi, E. F. Crabbe, and K. Chan, "A silicon nanocrystals based memory," Appl. Phys. Lett., vol. 68, no. 10, pp. 1377- 1379, Mar. 1996.
2. C. M. Compagnoni, R. Gusmeroli, D. Ielmini, A. S. Spinelli, and A. Lacaita, "Silicon nanocrystal memories: A status update," J. Nanosci. Nanotechnol., vol. 7, no. 1, pp. 193-205, Jan. 2007.
3. 1-xGex," IEEE Trans. Electron Devices, vol. 48, no. 4, pp. 696-700, Apr. 2001.
4. J. S. de Sousa, V. N. Freire, and J. P. Leburton, "Hole-versus electronbased operations in SiGe nanocrystal nonvolatile memories," Appl. Phys. Lett., vol. 90, no. 22, p. 223 504, May 2007.
5. T. Dürkop, E. Bugiel, I. Costina, A. Ott, R. Peibst, and K. R. Hofmann, "PE-CVD fabrication of germanium nanoclusters for memory applications," Mater. Sci. Eng. B, vol. 147, no. 2/3, pp. 213-217, Feb. 2008.
6. R. Peibst, T. Dürkop, E. Bugiel, A. Fissel, I. Costina, and K. R. Hofmann, "Driving mechanisms for the formation of nanocrystals by annealing of ultrathin Ge layers in SiO2," Phys. Rev. B, Condens. Matter, vol. 79, no. 19, p. 195 316, May 2009.
7. R. Peibst, M. Erenburg, E. Bugiel, and K. R. Hofmann, "Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime," J. Appl. Phys., vol. 108, no. 5, p. 054 316, Sep. 2010.
8. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York: McGraw-Hill, 1988, p. 106.
9. M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, and E. Gautier, "Electronic properties of Ge nanocrystals for non volatile memory applications," Solid State Electron., vol. 50, no. 7/8, pp. 1310- 1314, Jul./Aug. 2006.
10. V. Beyer, J. von Borany, and M. Klimenkov, "A transient electrical model of charging for Ge nanocrystal containing gate oxides," J. Appl. Phys., vol. 101, no. 9, p. 094 507, May 2007.
11. D. Bauza, "Near interface oxide trap capture kinetics in metal-oxidesemiconductor transistors: Modeling and measurements," J. Appl. Phys., vol. 84, no. 11, pp. 6178-6186, Dec. 1998.
12. R. G. Parr and W. Yang, Density-Functional Theory of Atoms and Molecules. New York: Oxford Univ. Press, 1989.
13. J. S. de Sousa, A. V. Thean, J. P. Leburton, and V. N. Freire, "Threedimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memories," J. Appl. Phys., vol. 92, no. 10, pp. 6182-6187, Nov. 2002.
14. i = ε in density-functional theory," Phys. Rev. B, Condens. Matter, vol. 18, no. 12, pp. 7165-7168, Dec. 1978.
15. A. Thean and J. P. Leburton, "Stark effect and single-electron charging in silicon nanocrystal quantum dots," J. Appl. Phys., vol. 89, no. 5, pp. 2808- 2815, Mar. 2001.
16. G. Iannaccone and P. Coli, "Three-dimensional simulation of nanocrystal flash memories," Appl. Phys. Lett., vol. 78, no. 14, pp. 2046-2048, Apr. 2001. (Pubitemid 33611313)
17. F. Rana, S. Tiwari, and J. J. Welser, "Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors," Superlatt. Microstruct., vol. 23, no. 3/4, pp. 757-770, Mar. 1998.
18. J. Suñé, P. Olivo, and B. Riccò, "Quantum- mechanical modeling of accumulation layers inMOS structure," IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1732-1739, Jul. 1992.
19. B. H. Koh, E. W. H. Kan, W. K. Chim, W. K. Choi, D. A. Antoniadis, and E. A. Fitzgerald, "Traps in germanium nanocrystal memory and effect on charge retention: Modeling and experimental measurements," J. Appl. Phys., vol. 97, no. 12, p. 124 305, Jun. 2005.