Atomic layer deposition on phase-shift lithography generated photoresist patterns for 1D nanochannel fabrication

ACS Applied Materials and Interfaces

Volumn 2, Issue 12, 2010, Pages 3473-3478

  Güder, Firat ^a   Yang, Yang ^a   Krüger, Michael ^a   Stevens, Gregory B ^a   Zacharias, Margit ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

ALD; nanochannel; nanotemplating; nanowire; near field contact phase shift lithography

Indexed keywords

1D NANOSTRUCTURES; ALD; CONTACT PHASE; FABRICATION ROUTES; LINE PATTERN; LOW TEMPERATURES; METAL OXIDES; NANO CHANNELS; NANOTEMPLATING; NEAR-FIELD; PHOTORESIST PATTERNS; RESIST PATTERN; SACRIFICIAL LAYER; SILICON SURFACES; SUB-100 NM; SUBSTRATE SURFACE; WAFER-SCALE; WALL PROPERTIES; WALL THICKNESS;

ACETONE; ATOMIC LAYER DEPOSITION; FABRICATION; LITHOGRAPHY; NANOWIRES; PHASE SHIFT; SILICON WAFERS; WALLS (STRUCTURAL PARTITIONS);

PHOTORESISTS;

NANOMATERIAL;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SURFACE PROPERTIES;

EID: 79151475728     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am100592f     Document Type: Article

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