Creating in-plane metallic-nanowire arrays by corner-mediated electrodeposition

Advanced Materials

Volumn 21, Issue 35, 2009, Pages 3576-3580

  Zhang, Bo ^a   Weng, Yu Yan ^a   Huang, Xiao Ping ^a   Wang, Mu ^a   Peng, Ru Wen ^a   Ming, Nai Ben ^a   Yang, Bingjie ^b   Lu, Nan ^b   Chi, Lifeng ^b,c  

^a NANJING UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

^c UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PURITY; CONCAVE CORNERS; COPPER NANOWIRES; COPPER WIRES; ELECTRIC VOLTAGE; IN-PLANE; METALLIC NANOWIRES; METALLIC WIRE; NANOWIRE ARRAYS; NUCLEATION BARRIER; NUCLEATION RATE; SILICON SUBSTRATES; SILICON SURFACES; SOLID SUBSTRATES; WIRE WIDTH;

COPPER; COPPER OXIDES; ELECTRIC WIRE; ELECTRODEPOSITION; NUCLEATION;

NANOWIRES;

EID: 70349772005     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200900730     Document Type: Article

References (38)

1. S. Luryi, J. Xu, A. Zaslavsky, Future Trends in Microelectronics: The Nano Millennium, Wiley-lnterscience, New York 2002.
2. T. W. Ebbesen, H. J. Lezec, H. F. Chaemi, T. Thio, P. A. Wolff, Nature 1998, 391, 667.
3. J. B. Pendry, L. Martin-Moreno, F. J. Carcia-Vidal, Science 2004, 305, 847.
4. W. L. Barnes, A. Dereux, T. W. Ebbesen, Natwre 2003, 424, 824.
5. E. Ozbay, Science 2006, 311, 189.
6. C. Girard, Rep. Prog. Phys. 2005, 68, 1883.
7. S. M. Nie, S. R. Emery, Science 1997, 275, 1102.
8. K. Kneipp, Y. Wang, H. Kneipp, L. T. Perelman, I. Itzkan, R. R. Dasari, M. S. Feld, Phys. Rev. Lett. 1997, 78, 1667.
9. V. C. Veselago, Sov. Phys. Usp. 1968, 10, 509.
10. R. A. Shelby, D. R. Simth, S. Schultz, Science 2001, 293, 77.
11. B. Fay, Microelectron. Eng. 2002, 61, 11.
12. T. M.Whitney, J. S.Jiang, P. C. Searson, C. L. Chien, Science 1993, 261, 1316.
13. a) X. Y. Zhang, L. D. Zhang, C. W. Meng, C. H. Li, N. Y. Jin-Philipp, F. Philipp, Adv. Mater. 2001, 13, 1238
14. b) Y. T. Pang, C. W. Meng, L. D. Zhang, Y. Qin, X. Y. Cao, A. W. Zhao, Q. Fang, Adv. Funct. Mater. 2002, 12, 719.
15. A. H. Liu, M. Ichihara, I. Honma, H. S. Zhou, Electrochem. Comm. 2007, 9, 1766.
16. C. R. Martin, Science 1994, 266, 1994.
17. B. H. Hong, S. C. Bae, C.W. Lee, S.Jeong, K. S. Kim, Science 2001, 294, 348.
18. Z.Zhang, D. Cekhtman, M. S. Dresselhaus, J. Y. Ying, Chem. Mater. 1999, 11, 1659.
19. W. Yoo, J. Lee, Adv. Mater. 2004, 16, 1097.
20. M. Z. Zhang, S. Lenhert, M. Wang, L. F. Chi, N. Lu, H. Fuchs, N. B. Ming, Adv. Mater. 2004, 16, 409.
21. Z. M. Qi, I. Honma, H. S. Zhou, Appl. Phys. Lett. 2007, 90, 011102.
22. a) S. Y. Chou, P. R. Krauss, P. J. Renstrom, Appl. Phys. Lett. 1995, 67, 3114.
23. b) S. Y. Chou, P. R. Krauss, P. J. Renstrom, Science 1996, 272, 85.
24. M. Wang, S. Zhong, X. B. Yin, J. M. Zhu, R. W. Peng, N. B. Ming, Phy. Rev. Lett. 2001, 86, 3827.
25. S. Zhong, Y. Wang, M. Wang, M. Z. Zhang, X. B. Yin, R. W. Peng, N. B. Ming, Phys. Rev. E 2003, 67, 061601.
26. Y. Wang, Y. Cao, M. Wang, S. Zhong, M. Z. Zhang, Y. Feng, R. W. Peng, X. P. Hao, N. B. Ming, Phys. Rev. E 2004, 69, 021607.
27. T. Liu, S. Wang, Z. L. Shi, C. B. Ma, M. Wang, R. W. Peng, X. P. Hao, N. B. Ming, Phys. Rev. E 2007, 75, 051606.
28. M. Z. Zhang, Y.Wang, G. W. Yu, M.Wang, R. W. Peng, N. B. Ming, J. Phys.: Condens. Matter 2004, 16, 695.
29. I. V. Markov, Crystal Growth for Beginners: Fundamentals of Nucleation, Crystal Growth and Epitaxy, 2nd ed., World Scientific, Singapore 2003.
30. A. Zangwill, Physics at Surfaces, Cambridge University Press, Cambridge, U.K 1988.
31. D. R. Smith, J. B. Pendry, M. C. K. Wiltshire, Science 2004, 305, 788.
32. N. Fang, H. Lee, C. Sun, X. Zhang, Science 2005, 308, 534.
33. K. L Tsakmakidis, A. D. Boardman, O. Hess, Nature 2007, 450, 397.
34. X. Zhang, Z. Liu, Nat. Mater. 2008, 7, 436.
35. N. B. Ming, Fundamentals of Crystal Growth Physics, Shanghai Science and Technology, Shanghai 1982.
36. W. Kurz, D. J. Fisher, Fundamentals of Solidification, 4th ed., Enfield Publishing & Distribution Company, Enfield, NH 2001.
37. A. Pimpinelli, J. Villain, Physics of Crystal Growth, Cambridge University Press, Cambridge 1998.
38. Y. Y. Weng, J. W. Si, W. T. Gao, Z. Wu, M. Wang, R. W. Peng, N. B. Ming, Phys. Rev. E 2006, 73, 051601.