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Volumn 70, Issue 20, 1997, Pages 2658-2660

Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

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EID: 0000509354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118988     Document Type: Article
Times cited : (294)

References (17)
  • 9
    • 51149210777 scopus 로고
    • A. Kumar and G. M. Whitesides, Appl. Phys. Lett. 63, 2002 (1993); A. Kumar, H. A. Biebuyck, and G. M. Whitesides, Langmuir 10, 1498 (1994).
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 2002
    • Kumar, A.1    Whitesides, G.M.2
  • 11
    • 85033318621 scopus 로고    scopus 로고
    • note
    • 4 on a piece of silicon with a native oxide layer and a patterned layer of photoresist. Oxide protected by the photoresist was not removed by the plasma. After etching, removing the photoresist with acetone left a pattern of silicon dioxide with the geometry of the resist.
  • 12
    • 85033317050 scopus 로고    scopus 로고
    • note
    • Patterns in gold were produced by evaporating gold onto a silicon wafer with patterned photoresist on its surface. Removal of the photoresist "lifts-off" gold deposited on its surface, and leaves a patterned layer of gold with the geometry of the resist.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.