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The tensile stress in the silicon nitride is high; therefore, stiffening of the membrane due to deflection-induced stretching can be neglected
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The tensile stress in the silicon nitride is high; therefore, stiffening of the membrane due to deflection-induced stretching can be neglected.
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Measured by the wafer curvature method after annealing
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Measured by the wafer curvature method after annealing.
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Water: static contact angle of θ = 40 ± 8° on silicon nitride and θ = 42 ± 5° on silicon oxide. Aniline: static contact angle of 22 ± 9° on silicon nitride and 28 ± 5° on silicon oxide.
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Water: static contact angle of θ = 40 ± 8° on silicon nitride and θ = 42 ± 5° on silicon oxide. Aniline: static contact angle of 22 ± 9° on silicon nitride and 28 ± 5° on silicon oxide.
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