Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1958-1961

  Liao, Chichih ^a   Cheng, Donald ^a   Cheng, Chienchia ^a   Cheng, K Y ^a   Feng, Milton ^a   Chiang, T H ^b   Kwo, J ^b   Hong, M ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting gallium arsenide; B3. Field effect transistors

Indexed keywords

ARSENIC COMPOUNDS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRON MULTIPLIERS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES;

A3. MOLECULAR BEAM EPITAXY; B1. OXIDES; B2. SEMICONDUCTING GALLIUM ARSENIDE; B3. FIELD EFFECT TRANSISTORS; CHANNEL MATERIALS; COMPOUND SEMICONDUCTORS; CONTACT LAYERS; ENHANCEMENT MODES; GAAS; GAAS MOSFET; GATE LENGTHS; HIGH-TEMPERATURE PROCESS; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS FETS; N CHANNELS; N-MOSFET; SCALING PROBLEMS; SELF-ALIGNED; SEMICONDUCTOR INTERFACES; SOURCE AND DRAINS;

FIELD EFFECT TRANSISTORS;

EID: 63349104002     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.064     Document Type: Article

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