A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Chee, Augustus K W ^a   Broom, Ronald F ^a   Humphreys, Colin J ^a   Bosch, Eric G T ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Thermo Fisher Scientific   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED NUMERICAL METHODS; CONTRAST MECHANISM; DETECTION SYSTEM; DOPANT PROFILING; ELECTROSTATIC FIELD; EXTERNAL FIELDS; MONTE CARLO MODEL; MONTE CARLO SIMULATION; NEW THEORY; POTENTIAL DISTRIBUTIONS; QUANTITATIVE MODELS; RAY-TRACING ALGORITHM; SCANNING ELECTRON MICROSCOPE; SCANNING ELECTRON MICROSCOPES; SECONDARY ELECTRON IMAGES; SEM; SURFACE BANDS;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRON MICROSCOPES; ELECTRON OPTICS; FINITE ELEMENT METHOD; NUMERICAL METHODS; SCANNING ELECTRON MICROSCOPY;

MONTE CARLO METHODS;

EID: 78751533890     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3524186     Document Type: Article

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