Effect of annealing and Nd concentration on the photoluminescence of Nd3+ ions coupled with silicon nanoparticles

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Debieu, O ^a   Brard D ^a   Podhorodecki, A ^b   Zatryb, G ^b   Misiewicz, J ^b   Labb C ^a   Cardin, J ^a   Gourbilleau, F ^a  

^a UNIVERSITÉ DE CAEN   (France)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DETRIMENTAL EFFECTS; EXCITONIC STATE; FOURIER TRANSFORM INFRARED; FTIR; HOST MATRICES; ND-DOPED; ND3+ ION; NONRESONANT; PHOTOLUMINESCENCE PROPERTIES; PL EXCITATIONS; RARE EARTH IONS; REACTIVE MAGNETRON CO-SPUTTERING; SI SUBSTRATES; SILICON NANOPARTICLES; X RAY MEASUREMENTS;

AGGLOMERATION; ANNEALING; ENERGY TRANSFER; FOURIER TRANSFORMS; MAGNETRONS; METAL IONS; NANOPARTICLES; NEODYMIUM; NEODYMIUM ALLOYS; PHASE SEPARATION; PHOTOLUMINESCENCE; SILICON; SILICON OXIDES; SPUTTER DEPOSITION; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78751481971     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3510521     Document Type: Article

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