Absorption mechanisms of silicon nanocrystals in cosputtered silicon-rich-silicon oxide films

Electrochemical and Solid-State Letters

Volumn 11, Issue 3, 2008, Pages

  Podhorodecki, A ^a   Misiewicz, J ^a   Gourbilleau, F ^b   Rizk, R ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; OXIDE FILMS; PARTIAL PRESSURE; SILICON COMPOUNDS; SPUTTERING;

ABSORPTION MECHANISMS; ABSORPTION TRANSITION; EMISSION BANDS; SILICON NANOCRYSTALS; SILICON RICH SILICON OXIDE FILMS; SPUTTERING METHOD;

NANOCRYSTALS;

EID: 38349181577     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2828207     Document Type: Article

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