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Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4555-4557

The photoluminescence of the thermo-treated silicon

(2) Bolotov, Valeriy V a Kan, Vasiliy E a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

Photoluminescence; Silicon; Thermodonors

Indexed keywords

BULK DEFECTS; CHECK METHOD; DEFECTS ANNEALING; DRY NITROGEN; EXPERIMENTAL DATA; NON-EQUILIBRIUM CARRIERS; PL INTENSITY; SI CRYSTALS; TEMPERATURE INCREASE; TEMPERATURE REGIONS; THERMAL DEFECTS; THERMAL TREATMENT;

ANNEALING; DEFECTS; GRAIN BOUNDARIES; OXYGEN;

PHOTOLUMINESCENCE;

EID: 74449092829 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2009.08.103 Document Type: Article

Times cited : (1)

References (14)

1
- 0001444498
- Kaiser W. Phys. Rev. 105 (1957) 1751
- (1957) Phys. Rev. , vol.105 , pp. 1751
- Kaiser, W.¹

2
- 0000004712
- Fuller C.S., Ditzenberger J.A., Hannay N.B., and Buehler E. Phys. Rev. A 96 (1955) 833
- (1955) Phys. Rev. A , vol.96 , pp. 833
- Fuller, C.S.¹ Ditzenberger, J.A.² Hannay, N.B.³ Buehler, E.⁴

3
- 0009437857
- Huff H.R., Kriegler R.J., and Takeishi Y. (Eds), Electrochemical Society, Pennington
- Patel J.R. In: Huff H.R., Kriegler R.J., and Takeishi Y. (Eds). Semiconductor Silicon (1981), Electrochemical Society, Pennington 189
- (1981) Semiconductor Silicon , pp. 189
- Patel, J.R.¹

4
- 0017720972
- Patel J.R., Jackson K.A., and Reiss H. J. Appl. Phys. 48 (1977) 5279
- (1977) J. Appl. Phys. , vol.48 , pp. 5279
- Patel, J.R.¹ Jackson, K.A.² Reiss, H.³

5
- 0345948698
- Tokuda Y., and Kobayashi N. J. Appl. Phys. 66 (1989) 3651
- (1989) J. Appl. Phys. , vol.66 , pp. 3651
- Tokuda, Y.¹ Kobayashi, N.²

6
- 12944266320
- Kamiura Y., Hashimoto F., and Yoneta M. J. Appl. Phys. 66 (1989) 3926
- (1989) J. Appl. Phys. , vol.66 , pp. 3926
- Kamiura, Y.¹ Hashimoto, F.² Yoneta, M.³

7
- 0036733848
- Binetti S., Pizzini S., Leoni E., et al. J. Appl. Phys. 92 (2002) 2437
- (2002) J. Appl. Phys. , vol.92 , pp. 2437
- Binetti, S.¹ Pizzini, S.² Leoni, E.³

8
- 25444448227
- Castaldini A., Cavalcoli D., Cavallini A., and Pizzini S. Phys. Status Solidi A 202 (2005) 889
- (2005) Phys. Status Solidi A , vol.202 , pp. 889
- Castaldini, A.¹ Cavalcoli, D.² Cavallini, A.³ Pizzini, S.⁴

9
- 10344231989
- Leoni E., Binetti S., Pichaud B., and Pizzini S. Eur. Phys. J. Appl. Phys. 27 (2004) 123
- (2004) Eur. Phys. J. Appl. Phys. , vol.27 , pp. 123
- Leoni, E.¹ Binetti, S.² Pichaud, B.³ Pizzini, S.⁴

10
- 0004101912
- Nauka, Moscow p. 28 (in Russian)
- Vavilov V.S., Kiselev V.F., and Mukashev B.N. Defects in the Bulk and at the Surface of Silicon (1990), Nauka, Moscow p. 28 (in Russian)
- (1990) Defects in the Bulk and at the Surface of Silicon
- Vavilov, V.S.¹ Kiselev, V.F.² Mukashev, B.N.³

11
- 0019049720
- Cazcarra V., and Zunino P. J. Appl. Phys. 51 (1980) 4206
- (1980) J. Appl. Phys. , vol.51 , pp. 4206
- Cazcarra, V.¹ Zunino, P.²

12
- 74449085056
- Pokrovsky Ya.E. (Ed), Nauka, Moscow (in Russian)
- Varshni I.P. In: Pokrovsky Ya.E. (Ed). Radiative Recombination in Semiconductors (1972), Nauka, Moscow 9 (in Russian)
- (1972) Radiative Recombination in Semiconductors , pp. 9
- Varshni, I.P.¹

13
- 58449104719
- (Semiconductors 41 (2007) 616)
- Sobolev N.A., Emel'yanov A.M., Zabrodsky V.V., et al. Fiz. Tekh. Poluprovodn. 41 (2007) 635 (Semiconductors 41 (2007) 616)
- (2007) Fiz. Tekh. Poluprovodn. , vol.41 , pp. 635
- Sobolev, N.A.¹ Emel'yanov, A.M.² Zabrodsky, V.V.³

14
- 0012294610
- Wei P.E., Kelton K.F., and Falster R. J. Appl. Phys. 88 (2000) 5062
- (2000) J. Appl. Phys. , vol.88 , pp. 5062
- Wei, P.E.¹ Kelton, K.F.² Falster, R.³

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