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Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

Metastable oxygen incorporation into thin film NiO by low temperature active oxidation: Influence on hole conduction

(3) Aydogdu, Gulgun H a Ruzmetov, Dmitry a Ramanathan, Shriram a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX OXIDES; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; ENERGY DEVICES; HOLE CONDUCTION; LIMITING VALUES; LOW TEMPERATURES; NIO THIN FILM; ORDER OF MAGNITUDE; OXYGEN INCORPORATION; OZONE OXIDATION; OZONE TREATMENT; SOLID STATE ELECTRONICS; THREE ORDERS OF MAGNITUDE; TRANSITION-METAL OXIDES; ULTRAVIOLET PHOTON; VALENCE STATE;

ELECTRIC CONDUCTIVITY OF SOLIDS; OXIDATION; OZONE; OZONE RESISTANCE; PHOTOEXCITATION; PHOTONS; SOLID STATE DEVICES; THIN FILMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 78751475279 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3516473 Document Type: Article

Times cited : (18)

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