Properties of nickel oxide films by DC reactive sputtering

Integrated Ferroelectrics

Volumn 68, Issue , 2004, Pages 19-25

  Myoungjae, Lee ^a   Sunae, Seo ^a   Seo, David ^a   Eunju, Jeong ^a   Yoo, I K ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Nickel oxide; Reactive sputtering; Resistivity

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; NICKEL COMPOUNDS; PARTIAL PRESSURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

GAS MIXTURE; MICROSTRUCTURAL PROPERTIES; NICKEL OXIDE; REACTIVE SPUTTERING;

FERROELECTRIC THIN FILMS;

EID: 33751163991     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490895509     Document Type: Article

References (9)

1. E. Fujii, A. Tomozawa, H. Torii, and R. Takayama, Jpn. J. Appl. Phys. 35, L328 (1996).
2. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films 236, 27 (1993).
3. A. K. Roslik, V. N. Konev, and A. M. Maltsev, Oxidation of Metals 43, 1-2 (1995).
4. K. S. Ahn, Y. C. Nah, and Y. E. Sung, Appl. Surf. Scie. 199, 259 (2002).
5. X. Chen, N. J. Wu, L. Smith, and A. Ignatiev, Appl. Phys. Lett. 84, 14 (2004).
6. K. Terakura, A. R. Williams, T. Oguchi, and J. Kübier, Phys. Rev. B 40, 4734 (1984).
7. M. Imada, A. Fujimori, and Y. Tokura, Rev. Mod. Phys. 70, 4 (1998).
8. I. Hotovy, D. Buc, shassik, and O. Nennewitz, Vacuum 50, 41 (1998).
9. Y. M. Lu, W. S. Hwang, and J. S. Yang, Surf. Coat. Tech. 155, 231, (2002).