Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

International Journal of Microwave and Wireless Technologies

Volumn 1, Issue 2, 2009, Pages 153-160

  Kuzmik, Jan ^a,g   Bychikhin, Sergey ^a   Pichonat, Emmanuelle ^b   Gaquière, Christophe ^c   Morvan, Erwan ^d   Kohn, Erhard ^e   Teyssier, Jean Pierre ^f   Pogany, Dionyz ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^c INSTITUT D ELECTRONIQUE   (France)

^d ALCATEL THALES III V LAB   (France)

^e UNIVERSITY OF ULM   (Germany)

^f UNIVERSITY OF LIMOGES   (France)

^g INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

AlGaN GaN; High electron mobility transistors; KeywordsSelf heating; Temperature measurements

Indexed keywords

AIR-BRIDGE STRUCTURE; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ELECTRICAL METHODS; EXPERIMENTAL METHODS; GAN/SAPPHIRE; HEAT ENERGY; HEAT PROPAGATION; HEATING TEMPERATURES; HEATING TIME; HIGH-POWER; MICRO-RAMAN; MULTIFINGERS; N TRANSISTOR; RESEARCH GROUPS; SELF-HEATING; SELF-HEATING EFFECT; THERMAL BOUNDARY RESISTANCE; THERMAL CHARACTERIZATION; THERMAL RESISTANCE; TRANSIENT INTERFEROMETRIC MAPPINGS; TRANSIENT STATE; WAFER MATERIAL;

BREEDER REACTORS; GALLIUM NITRIDE; HEATING; TECHNOLOGICAL FORECASTING; TEMPERATURE MEASUREMENT; TEMPERATURE MEASURING INSTRUMENTS; THERMAL INSULATING MATERIALS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78651550336     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078709990444     Document Type: Article

References (26)

1. Shin, M.W.; Trew, R.J.: GaN MESFETs for high-frequency and high-temperature microwave applications. Electronics Letters., 31 (1995), 498-500.
2. Daumiller, I.; Kirchner, C.; Kamp, M.; Ebeling, K.J.; Kohn, E.: Evaluation of the temperature stability of AlGaN/GaN heterostruc-ture FET's. IEEE Electron Device Lett., 20 (1999), 448-450.
3. Kohn, E.; Daumiller, I.; Kunze, M.; Nostrand, J.; Van Sewell, J.; Jenkins, T.: Switching behaviour of GaN-based HFETs: thermal and electronics transients. Electron. Lett., 38 (2002), 603-605.
4. Kohn, E. et al.: Transient characteristics of GaN-based heterostruc-ture field-effect transistors. IEEE Trans. Microwave Theory Tech., 51 (2003), 634-641.
5. Gaska, R.; Osinsky, A.; Yang, J.W.; Shur, M.S.: Self-heating in high-power AlGaN-GaN HFET's. IEEE Electron Device Lett., 19 (1998), 89-91.
6. Zhao, Y. et al.: Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminium nitride thin films. J. Appl. Phys., 96 (2004), 4563-4568.
7. Filippov, K.A.; Balandin, A.A.: The effect of the thermal boundary resistance on self-heating of AlGaN/GaN HFETs. MRS Internet J. Nitride Semiconductor Res. [Online]. 8, article 4. Avaliable at: http://nsr.mij.mrs.org/ 8/4/, (2003).
8. Turin, V.O.; Balandin, A.A.: Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface. Electron. Lett., 40 (2004), 81-83.
9. Eckhause, T.A.; Süzer, Ö.; Kurdak, C.; Yun, F.; Morkoc, H.: Electric-field-induced heating and energy relaxation in GaN. Appl. Phys. Lett., 82 (2003), 3035-3037.
10. Liu, R.; Ponce, F.A.; Dadgar, A.; Krost, A.: Atomic arrangement at the AlN/Si (111) interface. Appl. Phys. Lett., 83 (2003), 860-862.
11. Sun, J. et al.: Thermal Management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill. IEEE Electron Dev. Lett., 24 (2003), 375-377.
12. Das, J. et al.: Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design. IEEE Trans. Electron Devices, 53 (2006), 2696-2702.
13. Kuball, M. et al.: Measurement of temperature distribution in multi-finger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. Appl. Phys. Lett., 82 (2003), 124-126.
14. Shigekawa, N.; Onodera, K.; Shiojima, K.: Device Temperature measurement of highly biased AlGaN/GaN high-electron-mobility transistors. Jpn. J. Appl. Phys., 42 (2003), 2245-2249.
15. Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.: Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors. Appl. Phys. Lett., 83 (2003), 4655-4657.
16. Park, J.; Shin, M.W.; Lee, Ch.C.: Thermal modeling and measurement of AlGaN-GaN HFETs built on sapphire and SiC substrates. IEEE Trans. Electron Devices, 51 (2004), 1753-1759.
17. Kuzmík, J.; Javorka, P.; Alam, A.; Marso, M.; Heuken, M.; Kordoš, P.: Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method. IEEE Trans. Electron Devices, 49 (2002), 1496-1498.
18. Brown, J.D.; Borges, R.; Piner, E.; Vescan, A.; Singhal, S.; Therrien, R.: AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates. Solid-State Electronics., 46 (2002), 1535-1539.
19. Pogany, D. et al.: Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry. IEEE Trans. Electron Devices, 49 (2002), 2070-2078.
20. Pogany, D.; Bychikhin, S.; Litzenberger, M.; Groos, G.; Stecher, M.: Extraction of spatio-temporal distribution of power dissipation in semiconductor devices using nanosecond interferometric mapping technique. Appl. Phys. Lett., 81 (2002), 2881-2883.
21. Kuzmik, J. et al.: Transient thermal characterization of AlGaN/GaN HEMTs Grown on silicon. IEEE Trans. Electron Devices, 52 (2005), 1698-1705.
22. Kuzmik, J. et al.: Transient self-heating efects in multifinger AlGaN/GaN HEMTs with metal airbridges. Solid-State Electronics, 51 (2007), 969-974.
23. Kuzmik, J.; Bychikhin, S.; Pogany, D.; Gaquière, C.; Pichonat, E.; Morvan, E.: Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods. J. Appl. Phys., 101 (2007), 054508.
24. Pichonat, E. et al.: Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy and transient interferometric mapping. European Microwave Week, Manchester, 10-15 September (2006).
25. Balkanski, M.; Wallis, R.F.; Haro, E.: Anharmonic effects in light scattering due to optical phonons in silicon. Phys. Rev. B, 28 (1983), 1928-1934.
26. Hull, R, editor, Properties of Crystalline Silicon. EMIS Datareviews Series No. 20, INSPEC, 1999.