Imaging modes for potential mapping in semiconductor devices by electron holography with improved lateral resolution

Ultramicroscopy

Volumn 111, Issue 4, 2011, Pages 290-302

  Sickmann, Jan ^a   Formánek, Petr ^a,c   Linck, Martin ^a,d   Muehle, Uwe ^b   Lichte, Hannes ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b TU BERGAKADEMIE FREIBERG   (Germany)

^c LEIBNIZ INSTITUTE OF POLYMER RESEARCH DRESDEN   (Germany)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Dopant profiling; Electron holography; Electron optics

Indexed keywords

AREAS OF INTERESTS; DIFFRACTION LENS; DOPANT PROFILING; ELECTRON BIPRISM; FIELD OF VIEWS; IMAGING MODES; LATERAL RESOLUTION; LORENTZ; NANOMETRES; NON-MAGNETIC MATERIALS; OBJECTIVE LENS; POTENTIAL MAPPING; SCALE RESOLUTION; SEMICONDUCTOR STRUCTURE; SEMICONDUCTOR TECHNOLOGY; SET-UPS; WIDE FIELD OF VIEW;

ELECTRON HOLOGRAPHY; ELECTRONS; MAGNETIC MATERIALS; OPTICAL INSTRUMENT LENSES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; STANDARDS;

HOLOGRAMS;

ARTICLE; DIFFRACTION; ELECTRON HOLOGRAPHY; EQUIPMENT DESIGN; HOLOGRAPHY; IMAGE ANALYSIS; IMAGE PROCESSING; IMAGE RECONSTRUCTION; IMAGING SYSTEM; LORENTZ LENS; MATHEMATICAL MODEL; OPTICAL INSTRUMENTATION; OPTICAL RESOLUTION; SEMICONDUCTOR; SIGNAL DETECTION; SYSTEM ANALYSIS;

EID: 78651418283     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.12.016     Document Type: Article

References (21)

1. International Technology Roadmap for Semiconductors, 2008 update. (Semiconductor Industry Association, San Jose, CA, 2008, 〈〉). http://public.itrs.net.
2. Rau W.D., Schwander P., Baumann F.H., Hoeppner W., Ourmazd A. Two-dimensional mapping of the electrostatic potential in transistors by electron holography. Phys. Rev. Lett. 1999, 82:2614-2617.
3. Lichte H., Lehmann M. Electron holography-basics and applications. Rep. Prog. Phys. 2008, 71:016102.
4. L. Reimer, Transmission Electron Microscopy: Physics of Image Formation and Microanalysis, Springer, Berlin, ISBN 3-540-50499-0, 1989.
5. Gribelyuk M.A., McCartney M.R., Li J., Murthy C.S., Ronsheim P., Doris B., McMurray J.S., Hegde S., Smith D.J. Mapping of electrostatic potential in deep submicron CMOS devices by electron holography. Phys. Rev. Lett. 2002, 89. 025502-1-4.
6. Thesen A., Frost B.G., Joy D.C. Two-dimensional dopant profiling of ultrashallow junctions by electron holography. J. Vac. Sci. Technol. B 2002, 20:3063.
7. Formánek P., Kittler M. Electron holography on silicon microstructures and its comparison to other microscopic techniques. J. Phys. Condens. Matter 2004, 16:193-200.
8. Lenk A., Lichte H., Muehle U. 2D-mapping of dopant distribution in deep sub micron CMOS devices by electron holography using adapted FIB-preparation. J. Electron Microsc. 2005, 1093.
9. Cooper D., Truche R., Rivallin P., Hartmann J.-M., Laugier F., Bertin F., Chabli A., Rouviere J.-L. Medium resolution off-axis electron holography with millivolt sensitivity. Appl. Phys. Lett. 2007, 91:143501.
10. Zweck J., Bormans B.J.H. Imaging of magnetic structures with the CM30 Lorentz lens. Philips Electron Opt. Bull. 1992, 132.
11. Wang Y.Y., Kawasaki M., Bruley J., Gribelyuk M., Domenicucci A., Gaudiello J. Off-axis electron holography with a dual-lens imaging system and its usefulness in 2-D potential mapping of semiconductor devices. Ultramicroscopy 2004, 101:63-72.
12. Frost B.G., Voelkl E., Allard L.F. An improved mode of operation of a transmission electron microscope for wide field off-axis holography. Ultramicroscopy 1996, 63:15-20.
13. Lichte H. Performance limits of electron holography. Ultramicroscopy 2008, 108:256-262.
14. Lichte H. Electron holography: optimum position of the biprism in the electron microscope. Ultramicroscopy 1996, 64:79-86.
15. Lenz F. Statistics of phase and contrast determination in electron holograms. Optik 1988, 79:13.
16. Muehle U., Sickmann J., Hillmann L. Focused ion beam (FIB) based target preparation on transistors of the 70nm generation for electron holography. Pract. Metallogr. 2009, 46:509-519.
17. Cooper D., Ailliot C., Barnes J.-P., Hartmanna J.-M., Salles P., Benassayag G., Dunin-Borkowski R.E. Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation. Ultramicroscopy 2010, 110:383-389.
18. Li J., McCartney M.R., Smith D.J. Semiconductor dopant profiling by off-axis electron holography. Ultramicroscopy 2003, 94:149-161.
19. Twitchett-Harrison A.C., Yates T.J.V., Dunin-Borkowski R.E., Midgley P.A. Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures. Ultramicroscopy 2008, 108:1401-1407.
20. Wolf D., Lubk A., Lichte H., Friedrich H. Towards automated electron holographic tomography for 3D mapping of electrostatic potentials. Ultramicroscopy 2010, 110:390-399.
21. P.W. Hawkes, E. Kasper, F. Lenz, W.D. Riecke, T. Mulvey, Topics in current physics-magnetic electron lenses, in: P.W. Hawkes (Ed.), Springer-Verlag, Berlin, Heidelberg, New York, 1982.