Focused Ion Beam (FIB) based target preparation on transistors of the 70 nm generation for electron holography;Focused Ion Beam (FIB)-basierte zielpraparation an transistoren der 70 nm-generation zur elektronen holographie

Praktische Metallographie/Practical Metallography

Volumn 46, Issue 10, 2009, Pages 509-520

  Mühle, Uwe ^a   Sickmann, Jan ^b   Hillmann, Lutz ^c  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHY; FOCUSED ION BEAMS; HOLOGRAPHY; MICROELECTRONICS;

CONVENTIONAL TEM; SINGLE TRANSISTORS; STRUCTURAL WIDTH; TARGET OBJECT; TARGET PREPARATION;

ION BEAMS;

EID: 71049130312     PISSN: 0032678X     EISSN: None     Source Type: Journal    
DOI: 10.3139/147.110067     Document Type: Article

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