Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures

Ultramicroscopy

Volumn 108, Issue 11, 2008, Pages 1401-1407

  Twitchett Harrison, Alison C ^a   Yates, Timothy J V ^a   Dunin Borkowski, Rafal E ^a   Midgley, Paul A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Device characterisation; Electron holography; Electron tomography; Silicon devices

Indexed keywords

DATA ACQUISITION; DATA RECORDING; DIAGNOSTIC RADIOGRAPHY; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE TOMOGRAPHY; ELECTRON HOLOGRAPHY; ELECTROSTATIC DEVICES; ELECTROSTATICS; FOCUSED ION BEAMS; HOLOGRAPHIC INTERFEROMETRY; HOLOGRAPHY; IMAGING TECHNIQUES; ION BOMBARDMENT; LASER RECORDING; MEDICAL IMAGING; NONMETALS; PHOTONICS; REPAIR; RESTORATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; SPECIMEN PREPARATION; THERMOGRAPHY (TEMPERATURE MEASUREMENT); THREE DIMENSIONAL; TOMOGRAPHY;

BULK-LIKE; CHARACTERISATION; DATA RECONSTRUCTION; DEVICE CHARACTERISATION; DEVICE STRUCTURES; DOPANT CONCENTRATIONS; ELECTRON TOMOGRAPHY; ELECTROSTATIC POTENTIAL; ELECTROSTATIC POTENTIAL DISTRIBUTION; FOCUSED-ION-BEAM; P-N JUNCTIONS; QUANTITATIVE ANALYSIS; SAMPLE PREPARATIONS; SILICON DEVICES; SPECIMEN PREPARATION METHOD; SPECIMEN SURFACES; TOMOGRAPHIC RECONSTRUCTIONS;

SEMICONDUCTOR DEVICES;

ANALYTIC METHOD; ARTICLE; COMPUTER ASSISTED TOMOGRAPHY; ELECTRICITY; ELECTRON HOLOGRAPHIC TOMOGRAPHY; IMAGE DISPLAY; IMAGE QUALITY; IMAGE RECONSTRUCTION; SEMICONDUCTOR; SURFACE PROPERTY; THICKNESS; THREE DIMENSIONAL IMAGING;

EID: 52949094247     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.05.014     Document Type: Article

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