Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 1, 2011, Pages 30-36

  Matulionis, A ^a   Liberis, J ^a   Matulioniene, I ^a   Sermuksnis E ^a   Leach, J H ^b   Wu, M ^b   Morkoc H ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b Virginia Commonwealth University   (United States)

Author keywords

heterostructure field effect transistors; hot electron fluctuations; hot phonons; nitride semiconductors; noise

Indexed keywords

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HOT ELECTRON FLUCTUATIONS; HOT PHONONS; NITRIDE SEMICONDUCTORS; NOISE;

DEGRADATION; DRAIN CURRENT; ELECTRON GAS; HETEROJUNCTIONS; HOT ELECTRONS; NITRIDES; PHONONS; RESONANCE; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 78651372496     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026361     Document Type: Article

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