Stokes and anti-Stokes resonant Raman scatterings from biased GaN/AlN heterostructure

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Xu, Guibao ^a   Tripathy, Suvranta K ^a   Mu, Xiaodong ^a   Ding, Yujie J ^a   Wang, Kejia ^b   Cao, Yu ^b   Jena, Debdeep ^b   Khurgin, Jacob B ^c  

^a Lehigh University   (United States)

^b University of Notre Dame   (United States)

^c Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; PHONONS; SCATTERING; SEMICONDUCTOR QUANTUM DOTS;

ANTI-STOKES; ANTI-STOKES RAMAN SCATTERINGS; APPLIED ELECTRIC FIELDS; FIRST ORDERS; HETEROSTRUCTURE; LATTICE TEMPERATURES; LONGITUDINAL-OPTICAL; NON EQUILIBRIUMS; RESONANT RAMAN SCATTERINGS; SCATTERING PROCESS; SECOND ORDERS; STRONG RESONANCES;

RAMAN SCATTERING;

EID: 51849088096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967337     Document Type: Article

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