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Volumn 108, Issue 12, 2010, Pages

A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties

(3) Othonos, Andreas a Zervos, Matthew a Christofides, Constantinos a

a UNIVERSITY OF CYPRUS (Cyprus)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EMISSION; BAND-EDGE EMISSIONS; BROAD-BAND PHOTOLUMINESCENCE; GAN NANOWIRES; GAS FLOWS; HEXAGONAL WURTZITE; NITRIDATION TEMPERATURE; OXYGEN DEFECT; PHOTOLUMINESCENCE PROPERTIES; PL SPECTRA; RED EMISSIONS; SYSTEMATIC INVESTIGATIONS;

CRYSTAL STRUCTURE; FLOW OF GASES; GALLIUM ALLOYS; NANOWIRES; NITRIDATION; OXYGEN; PHOTOLUMINESCENCE; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 78650898677 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3525562 Document Type: Article

Times cited : (15)

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