Growth of Nb-catalysed GaN nanowires

Microelectronics Journal

Volumn 39, Issue 12, 2008, Pages 1629-1633

  Zhuang, Hui Zhao ^a   Li, Bao Li ^a   Xue, Cheng Shan ^a   Zhang, Xiao kai ^a   Zhang, Shi Ying ^a   Wang, De Xiao ^a   Shen, Jia Bing ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Nanocrystalline materials; Nanostructure; Nb; Semiconductors; Sputtering

Indexed keywords

ELECTRIC WIRE; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NIOBIUM; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

EMISSION TRANSMISSIONS; GAN NANOWIRES; GROWTH MECHANISMS; HEXAGONAL WURTZITE; NB; SEMICONDUCTORS; STRUCTURE AND MORPHOLOGIES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

GALLIUM ALLOYS;

EID: 56049113059     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.02.007     Document Type: Article

References (25)

1. Zhong Z., Qian F., Wang D., and Lieber C.M. Nano Letters 3 (2003) 343
2. Nam C., Jaroenapibal P., Tham D., Luzzi D.E., Evoy S., and Fischer J.E. Nano Letters 6 (2006) 153
3. Mamutin V.V. Tech. Phys. Lett. 25 (1999) 741
4. Duan X., and Lieber C. J. Am. Chem. Soc. 122 (2000) 188
5. Chen G., Zhang L., Zhu Y., Fei G., Li L., Mo C., and Mao Y. Appl. Phys. Lett. 75 (1999) 2455
6. He M., and Zhou P. J. Cryst. Growth 231 (2001) 357
7. Cheng G., Kolmakov A., and Zhang Y. Appl. Phys. Lett. 83 (2003) 1578
8. Jung W.-S. Bull. Korean Chem. Soc. 25 (2004) 1
9. CHANG K.-W., and WU J.-J. Appl. Phys. A 77 (2003) 769-774
10. Yang L., Xue C., Wang C., and Li H. Nanotechnology 14 (2003) 50
11. Xue C., Wei Q., Sun Z., Dong Z., Sun H., and Shi L. Nanotechnology 15 (2004) 724
12. Dong Z., Xue C., Zhuang H., Wang S., Gao H., Tian D., Wu Y., and Liu Y. Physica E-Low-Dimensional Syst. Nanostruct. 27 (2005) 32
13. Shoubin X., Huizhao Z., Chengshan X., Li H., Li B., and Zhang S. Appl. Phys. A 00 (2007) 1-5
14. Ai Y., and Xue C. Mater. Lett. 61 13 (2007) 2833-2836
15. Ziolek M. Catal. Today 78 (2003) 47-64
16. Perlin P. Phys. Rev. B 45 (1992) 83
17. Chengshan X., and Yuxin W. Chin. Sci. Bull. 51 14 (2006) 1662-1665
18. Nahlah E., Srinivasa R.S., and Major S. Thin Solid Films 333 (1998) 9
19. Pal S., and Sugino T. Appl. Surf. Sci. 161 (2001) 263
20. Zhang C.G., Chen W.D., Bian L.F., Song S.F., and Hsu C.C. Appl. Surf. Sci. 252 (2006) 2153-2158
21. Pal S., and Mahapatra R. Thin Solid Films 425 (2003) 20
22. He M., and Minus I. Appl. Phys. Lett. 77 (2000) 3731
23. Butt D.P., Park Y., and Taylor T.N. J. Nucl. Mater. 264 (1999) 71
24. Seo H.W., Bae S.Y., Park J., Yang H., and Kim B. J. Phys. Chem. B 107 (2003) 6739-6742
25. G. Tither, Progress in Niobium Markets and Technology 1981-2001, TMS, Indianapolis, 2001, pp. 1-16.