Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate

Chinese Science Bulletin

Volumn 51, Issue 14, 2006, Pages 1662-1665

  Xue, Chengshan ^a   Wu, Yuxin ^a   Zhuang, Huizhao ^a   Tian, Deheng ^a   Liu, Yi'An ^a   He, Jianting ^a   Ai, Yujie ^a   Sun, Lili ^a   Wang, Fuxue ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

GaN nanowires; Magnetron sputtering; Photoluminescence

Indexed keywords

EID: 33748925756     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-006-2042-z     Document Type: Article

References (16)

1. Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281: 956-961
2. Brown S A, Reeves R J, Haase C S. Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence. Appl Phys Lett, 1999, 75(21): 3285-3287
3. Morales A M, Lieber C M. A laser ablation method for the synthesis of crystalline semiconductor nanowires. Science, 1998, 279(5348): 208-211
4. Han W Q, Fan S S, Li Q Q, et al. Synthesis of galliium nitride nanorods through a carbon nanotube-confmed reaction. Science, 1997, 277: 1287-1289
5. Cheng G S, Chen S H, Zhu X G, et al. Highly ordered nanostructures of single-crystalline GaN nanowires. Mater Sci & Eng: A, 2000, 286: 165-168
6. Lyu S C, Cha O H, Suh E K, et al. Catalytic synthesis and photoluminescence of gallium nitride nanowires. J Chem Phys Lett, 2003, 367: 136-140
7. 3. Appl Phys Lett, 2000, 77: 3731-3733
8. Huang Y, Duan X, Cui Y, et al. Logic gates and computation from assembled nanowire building blocks. Science, 2001, 294(5545): 1313-1317
9. Boo J H, Rohr C, Ho W. MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer. J Crystal Growth, 1998, 189/190: 439-444
10. 3 films' reaction with ammonia. Phys E, 2005, 27: 32-37
11. Sun Y, Miyasato T, Wigmore J K. Characterization of excess carbon in cubic SiC films by infrared absorption. J Appl Phys, 1999, 85: 3377-3379
12. 1-y Cy alloys as measured with infrared absorption and Raman spectroscopy. J Appl Phys, 1997, 82: 4246-4252
13. 2 wrappers. Nanostructured Materials, 1999, 12: 1003-1006
14. Ridley B K. Quantum Process in Semiconductors. Oxford: Clarendon, 1982. 62-66
15. Monemar B. Fundamental energy gap of GaN from photoluminescence excitation spectra. Phys Rev B, 1974, 10: 676-681
16. Chen C C, Yeh C H, Chen C H, et al. Catalytic growth and characterization of gallium nitride nanowires. J Am Chem Soc, 2001, 123: 2791-2798